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Advance Product Information
September 2, 2005
Wideband LNA with AGC
Key Features
* * * * * * * *
TGA2513-EPU
Frequency Range: 2-23 GHz 17 dB Nominal Gain > 30 dB Adjustable Gain with Vg2 16 dBm Nominal P1dB < 2 dB Midband Noise Figure 0.15 um 3MI pHEMT Technology Nominal Bias: Vd = 5V, Id = 75 mA Chip Dimensions: 2.09 x 1.35 x 0.10 mm (0.082 x 0.053 x 0.004 in)
Product Description
The TriQuint TGA2513-EPU is a compact LNA/Gain Block MMIC with AGC via the control gate. The LNA operates from 2-23 GHz and is designed using TriQuint's proven standard 0.15 um gate pHEMT production process. The TGA2513-EPU provides a nominal 16 dBm of output power at 1 dB gain compression with a small signal gain of 17 dB. Typical noise figure is < 3 dB from 2-18 GHz. The TGA2513-EPU is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures, decoys, jammers and phased array systems. The TGA2513-EPU is 100% DC and RF tested on-wafer to ensure performance compliance.
Primary Applications * Wideband Gain Block / LNA * X-Ku Point to Point Radio * IF & LO Buffer Applications Measured Fixtured Data
Vd = 5V, Id= 75mA, Vg2 = 2V, Typical Vg1 = -60mV
20 16 12
Gain
30 24 12 6 0
Output
Gain (dB)
8 4 0 -4 -8
-6 -12
-12 -16 0
Input
-18 -24 6 9 12 15 18 21 24 27 30
3
Frequency (GHz)
9 8 7 6
NF (dB)
5 4 3 2 1 0 2 4 6 8 10 12 14 16 18 20 22 24
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Return Loss (dB)
18
Advance Product Information
TABLE I MAXIMUM RATINGS 1/ SYMBOL V
+
September 2, 2005 TGA2513-EPU
PARAMETER Positive Supply Voltage Gate 1 Supply Voltage Range Gate 2 Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
VALUE 7V -2V TO 0 V -0.5 V TO +3.5 V 151 mA 10 mA 21 dBm 1.5 W 117 C 320 C -65 to 117 C
NOTES 2/
Vg1 Vg2 I
+
2/ 2/ 2/, 3/ 4/, 5/
| IG | PIN PD TCH TM TSTG 1/ 2/ 3/ 4/
These ratings represent the maximum operable values for this device. Current is defined under no RF drive conditions. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this power dissipation with a base plate temperature of 70 C, the median life is 1 E+6 hours. Junction operating temperature will directly affect the device median time to failure (T M). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET.
5/
TABLE II DC PROBE TEST (TA = 25 C, Nominal) SYMBOL Idss, Q1- Q10 Vp, Q1-Q10 VBVGD, Q1-Q10 VBVGS, Q1-Q10 PARAMETER Saturated Drain Current Pinch-off Voltage Breakdown Voltage GateDrain Breakdown Voltage GateSource MINIMUM --1 -30 -30 MAXIMUM 216 0 -5 -5 UNIT mA V V V
Note: Q1-Q10 is a 720um size FET.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 2, 2005 TGA2513-EPU
TABLE III RF CHARACTERIZATION TABLE (TA = 25 C, Nominal) Vd = 5V, Id = 75 mA Vg2 = 2V SYMBOL Gain IRL ORL NF PARAMETER Small Signal Gain Input Return Loss Output Return Loss Noise Figure Output Power @ 1dB Gain Compression TEST CONDITION f = 2-23 GHz f = 2-23 GHz f = 2-23 GHz f = 3-13 GHz f = 2-18 GHz f = 2-23 GHz NOMINAL 17 14 14 2 <3 16 UNITS dB dB dB dB
P1dB
dBm
TABLE IV THERMAL INFORMATION* Parameter RJC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 5 V I D = 75 mA Pdiss = 0.375 W TCH (oC) 82 RJC (C/W) 32 TM (HRS) 4.5 E+7
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 2, 2005 TGA2513-EPU
Measured Fixtured Data Vd = 5V, Id= 75mA, Typical Vg1 = -60mV, Vg2 = 2V
20 16 12
Gain
30 24
Gain (dB)
8 4 0 -4 -8
Output
12 6 0 -6 -12
Input
-12 -16 0
9 8 7 6
-18 -24 6 9 12 15 18 21 24 27 30
3
Frequency (GHz)
NF (dB)
5 4 3 2 1 0 2 4 6 8 10 12 14 16 18 20 22 24
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Return Loss (dB)
18
Advance Product Information
September 2, 2005 TGA2513-EPU
Measured Fixtured Data Vd = 5V, Typical Vg1 = -60 mV
20 15 10
Id=73mA Vg2= 2.0V Id=42mA Vg2=0.16V Id=21mA Vg2=-0.05V Id=15mA Vg2=-0.25V Id=11mA Vg2=-0.33V Id=9mA Vg2=-0.37V Id=5mA Vg2=-0.43V Id=3mA Vg2=-0.47V
Gain (dB)
5 0
-5 -10 -15 -20 0 2 4 6 8 10 12 14 16 18 20 22 24
Frequency (GHz)
Vd = 5V, Id= 75mA, Typical Vg1 = -60mV,Vg2 = 2V
20 18
Output Power (dBm)
16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24
P2dB P1dB
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 2, 2005 TGA2513-EPU
Measured Fixtured Data Vd = 5V, Id= 75mA, Typical Vg1 = -60mV, Vg2 = 2V
60 50
2 GHz
IMD3 (dBc)
40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
10 GHz 14 GHz 18 GHz 20 GHz 22 GHz 24 GHz
Fundamental output power per tone (dBm)
RC 31_29
35 30
TOI (dBm)
25 20 15 10 5 0 3 6 9 12 15 18 21 24 27 30
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 6
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 2, 2005 TGA2513-EPU
Measured Fixtured Data Vd = 5V, Id= 75mA, Pin = -10 dBm
30 25
Vg2=2.00V Vg2=1.75V Vg2=1.50V Vg2=1.25V Vg2=1.00V
Output TOI (dBm)
20 15 10 5 0 8 9 10 11 12 13 14 15 16 17 18
Vg2=0.75V Vg2=0.50V Vg2=0.25V Vg2=0.0V Vg2=-0.25V
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 7
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 2, 2005 TGA2513-EPU
Mechanical Characteristics
1.208 (0.048) 1.980 (0.078) 0.103 (0.004) 2 1 5 0.099 (0.004) 0.095 (0.004) GND IS BACKSIDE OF MMIC Bond Bond Bond Bond Bond Pad Pad Pad Pad Pad #1: #2: #3: #4: #5: RF IN VG2 VD RF OUT VG1 0.100 x 0.125 (0.004 x 0.005) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.125 (0.004 x 0.005) 0.100 x 0.125 (0.004 x 0.005) 0.100 x 0.100 (0.004 x 0.004)
1.351 (0.053) 1.242 (0.049)
3
1.210 (0.048)
4
0.973 (0.038)
0.235 (0.009)
0.000 (0.000)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 8
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
0.000 (0.000)
Units: millimeters (inches) Thickness: 0.100 (0.004) (reference only) Chip edge to bond pad dimensions are shown to center of pad Chip size tolerance: +/- 0.051 (0.002)
1.971 (0.078)
2.091 (0.082)
Advance Product Information
September 2, 2005 TGA2513-EPU
Recommended Assembly Diagram
Vg2
Vd
100 pF
RF OUT
RF IN
100 pF
Vg1
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 9
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 2, 2005 TGA2513-EPU
Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec. An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 10
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com

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